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MG10/16/20/32系列电流传感器

MG10/16/20/32系列电流传感器
简单介绍

The MGxx series device is a high performance current sensor based on Magtron ASIC Quadracore technology with high accuracy in the full temperature range, adjustable analog output. It’s suitable for the application of industrial products, such as the inverter, UPS, servo motor driver and other industrial products. The ultra-small package is designed for the high power density application and eas

产品描述

Select Part List

Part Number

IPNA

IPMA

Accuracy

MG10A

10

±25

3%

MG16A

16

±40

3%

MG20A

20

±50

3%

MG32A

32

±80

3%

MG10B

10

±25

5%

MG16B

16

±40

5%

MG20B

20

±50

5%

MG32B

32

±80

5%

 

Overview

The MGxx series device is a high performance current sensor based on Magtron ASIC Quadracore technology with high accuracy in the full temperature range, adjustable analog output.

It’s suitable for the application of industrial products, such as the inverter, UPS, servo motor driver and other industrial products. The ultra-small package is designed for the high power density application and easy to use.

MGxx series is designed for the replacement of shunt solution and the transformer solution with high cost effective.

Application circuit

 

Note: C1, C2 should be close to the current sensor’s pin

Component selection reference:

Designator

Description

C1

TDK,X7R,22nF/16V,±10%,0603

C2

TDK,X5R,10uF/16V,±10%,0603

 

Pin Definition

Symbol

Description

V

Power supply pin

G

Power GND pin

O

Signal output pin

R

Reserved

 

Assembly PIN output:

PCB Footprint (in mm. Tolerance ±0.2mm ) Top view

Absolute Maximum Ratings

 

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage(not operating)

VC

 

 

9

V

Jumper temperature

TJ

 

120

 

Ambient operating temperature

TA

-40

 

+85

Ambient storage temperature

TA

-40

 

+105

ESD rating, Human Body Model(HBM)

UESD

 

2

 

kV

 

Isolation Characteristics

Parameter

Symbol

Min

Unit

Comment

RMS Voltage  for AC Insulation test 50/60Hz/1 min

VD

3

kV

 

Through hole conductor isolation distance suggestion

DCP

9.3

mm

 

Distance between source side lead and secondary side pin

DSS

10.8

mm

 

 

 

Electrical data MG10A

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

10

 

A

 

Primary current , measuring range

IPM

-25

 

+25

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0.21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@40~+85

Theoretical Sensitivity

GTH

 

80

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

3

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

 

Electrical data MG10B

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

10

 

A

 

Primary current , measuring range

IPM

-25

 

+25

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±300

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

80

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

5

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG16A

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

16

 

A

 

Primary current , measuring range

IPM

-40

 

+40

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

50

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

3

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG16B

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

16

 

A

 

Primary current , measuring range

IPM

-40

 

+40

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

50

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

5

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG20A

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

20

 

A

 

Primary current , measuring range

IPM

-50

 

+50

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

40

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

3

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG20B

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

20

 

A

 

Primary current , measuring range

IPM

-50

 

+50

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

40

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

5

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG32A

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

32

 

A

 

Primary current , measuring range

IPM

-80

 

+80

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

25

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

3

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Electrical data MG32B

At Ta=25℃,Vc=5V,RL=10KΩ, unless otherwise noted

Parameter

Symbol

Min

Typ

Max

Unit

Comment

Primary nominal RMS current

IPN

 

32

 

A

 

Primary current , measuring range

IPM

-80

 

+80

A

 

Supply voltage

Vc

4.75

5

5.25

V

 

Number of primary tums

NP

 

1

 

 

 

Resistance of primary jumper

RP

 

0. 21

 

@+25

Current consumption

IC

 

20

25

mA

 

Output Voltage range @IPM

VO

 

2.5±2

 

V

 

Temperature coefficient of VO @Ip=0A

TCVO

 

±200

 

PPM/K

@-40~+85

Theoretical Sensitivity

GTH

 

25

 

mV/A

 

Temperature coefficient of Gain

TCG

 

±400

 

PPM/K

@-40~+85

Linearity error 0~IPM

εL

 

0.4

 

% of IPM

 

Magnetic offset voltage

VOM

 

10

 

mV

 

Total Accuracy @IPM

X

 

5

 

% of Vom

@+25

Frequency bandwidth(-3 dB)

BW

 

150

 

kHz

 

Reaction time @10% of IPN

TRA

 

2.5

 

uS

 

Reaction time @90% of IPN

TA

 

2.9

 

uS

 

 

 

Packaging information

Weight/pcs

Quantity/Carton

Weigh/Carton

6.5g

480 Pcs

3.9KG

 

 

Dimensions in MGxx series

Mechanical Characteristics ( Unit : mm, Tolerance in +-0.2)



strategic cooperation: Jiangsu China Sensor Technology Co., Ltd.

Nanjing city Jiangning District Xingfa Road No. 99 211103.China

E-mail:master@csch.com.cn   info@magtronworld.com

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